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this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. october 2014 docid026788 rev 2 1/18 STP7N65M2, stu7n65m2 n-channel 650 v, 0.98 ? typ., 5 a mdmesh? m2 power mosfets in to-220 and ipak packages datasheet - preliminary data figure 1. internal schematic diagram features ? extremely low gate charge ? excellent output capacitance (c oss ) profile ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel power mosfet developed using the mdmesh? m2 technology. thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. it is therefore suitable for the most demanding high efficiency converters. 7$% 72 ,3$. 7$% am15572v1 (2, tab) s(3) g(1) order code v ds r ds(on) max i d STP7N65M2 650 v 1.15 ? 5 a stu7n65m2 650 v 1.15 ? 5 a table 1. device summary order code marking package packaging STP7N65M2 7n65m2 to-220 tube stu7n65m2 7n65m2 ipak tube www.st.com
contents STP7N65M2, stu7n65m2 2/18 docid026788 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 to-220, STP7N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 ipak, stu7n65m2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
docid026788 rev 2 3/18 STP7N65M2, stu7n65m2 electrical ratings 18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 5 a i d drain current (continuous) at t c = 100 c 3.2 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 20 a p tot total dissipation at t c = 25 c 60 w dv/dt (2) 2. i sd 5 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd =400 v peak diode recovery voltage slope 15 v/ns dv/dt (3) 3. v ds 520 v mosfet dv/dt ruggedness 50 t stg storage temperature - 55 to 150 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit to-220 ipak r thj-case thermal resistance junction-case max 2.08 c/w r thj-amb thermal resistance junction-ambient max 62.5 100 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 1a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50v) 103 mj
electrical characteristics STP7N65M2, stu7n65m2 4/18 docid026788 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 650 v i dss zero gate voltage drain current v gs = 0, v ds = 650 v 1 a v gs = 0, v ds = 650 v, t c =125 c 100 a i gss gate-body leakage current v ds = 0, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 2.5 a 0.98 1.15 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 -270-pf c oss output capacitance - 14.5 - pf c rss reverse transfer capacitance -0.8-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v ds = 0 to 520 v, v gs = 0 - 108 - pf r g intrinsic gate resistance f = 1 mhz open drain - 7 - ? q g total gate charge v dd = 520 v, i d = 5 a, v gs = 10 v (see figure 17 ) -9-nc q gs gate-source charge - 2.3 - nc q gd gate-drain charge - 4.3 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 325 v, i d = 2.5 a, r g = 4.7 ? , v gs = 10 v (see figure 16 and 21 ) -8-ns t r rise time - 20 - ns t d(off) turn-off delay time - 30 - ns t f fall time - 20 - ns
docid026788 rev 2 5/18 STP7N65M2, stu7n65m2 electrical characteristics 18 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 5 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 20 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 5 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 5 a, di/dt = 100 a/s v dd = 60 v (see figure 21 ) - 275 ns q rr reverse recovery charge - 1.62 c i rrm reverse recovery current - 11.8 a t rr reverse recovery time i sd = 5 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 21 ) - 430 ns q rr reverse recovery charge - 2.54 c i rrm reverse recovery current - 11.9 a
electrical characteristics STP7N65M2, stu7n65m2 6/18 docid026788 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220 figure 3. thermal impedance for to-220 i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 1ms 100s 0.01 tj=150c tc=25c single pulse 10ms 100 gipg060820141445fsr figure 4. safe operating area for ipak figure 5. thermal impedance for ipak i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 1ms 100s 0.01 tj=150c tc=25c single pulse 10ms 100 gipg060820141409fsr figure 6. output characteristics figure 7. transfer characteristics i d 6 2 0 0 5 v ds (v) 10 (a) 15 4v 5v v gs =7, 8, 9, 10v 4 8 20 6v gipg060820141159fsr i d 6 4 2 0 04 v gs (v) 8 (a) 26 8 v ds =20v gipg060820141210fsr
docid026788 rev 2 7/18 STP7N65M2, stu7n65m2 electrical characteristics 18 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance v gs 6 4 2 0 0 4 q g (nc) (v) 8 6 8 10 v dd =520v i d =5a 300 200 100 0 400 500 v ds 2 10 v ds (v) 12 600 gipg060820141216fsr r ds(on) 0.96 0.94 0.92 0 2 i d (a) ( ) 1 3 0.98 v gs =10v 4 5 1.0 1.02 1.04 gipg060820141221fsr figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature c 100 10 1 0.1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 1000 gipg060820141238fsr e oss 1.2 0.6 0 0 100 v ds (v) (j) 400 200 300 1.8 500 600 2.4 gipg060820141302fsr v gs(th) 0.9 0.8 0.7 0.6 -75 0 t j (c) (norm) 25 1.0 75 25 125 i d =250a 1.1 am18065v1 r ds(on) 1.8 1.0 0.2 -75 0 t j (c) (norm) -25 75 25 125 0.6 1.4 2.2 i d =2.5a v gs =10v am18066v1
electrical characteristics STP7N65M2, stu7n65m2 8/18 docid026788 rev 2 figure 14. source-drain diode forward characteristics figure 15. normalized v (br)dss vs temperature v sd 2 i sd (a) (v) 134 0.5 0.6 0.7 t j =-50c t j =150c t j =25c 0.8 0.9 1 5 0 1.1 gipg060820141313fsr v (br)dss -75 0 t j (c) (norm) -25 75 25 125 0.88 0.92 0.96 1.00 1.04 1.08 i d =1ma am18067v1
docid026788 rev 2 9/18 STP7N65M2, stu7n65m2 test circuits 18 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive waveform figure 21. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data STP7N65M2, stu7n65m2 10/18 docid026788 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid026788 rev 2 11/18 STP7N65M2, stu7n65m2 package mechanical data 18 4.1 to-220, STP7N65M2 figure 22. to-220 type a drawing bw\sh$b5hyb7
package mechanical data STP7N65M2, stu7n65m2 12/18 docid026788 rev 2 table 9. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ?p 3.75 3.85 q2.65 2.95
docid026788 rev 2 13/18 STP7N65M2, stu7n65m2 package mechanical data 18 4.2 ipak, stu7n65m2 figure 23. ipak (to-251)type a drawing 0068771_l
package mechanical data STP7N65M2, stu7n65m2 14/18 docid026788 rev 2 table 10. ipak (to-251) type a mechanical data dim mm. min. typ. max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.43 b5 0.30 c 0.45 0.60 c2 0.46 0.60 d 6.00 6.20 e 6.40 6.70 e2.28 e1 4.40 4.60 h16.10 l 9.00 9.60 l1 0.80 1.20 l2 0.80 1.25 v1 10
docid026788 rev 2 15/18 STP7N65M2, stu7n65m2 package mechanical data 18 figure 24. ipak (to-251) type c drawing 7\sh&5hy/
package mechanical data STP7N65M2, stu7n65m2 16/18 docid026788 rev 2 table 11. ipak (to-251) type c mechanical data dim. mm min. typ. max. a 2.20 2.30 2.35 a1 0.90 1.00 1.10 b 0.66 0.79 b2 0.90 b4 5.23 5.33 5.43 c 0.46 0.59 c2 0.46 0.59 d 6.00 6.10 6.20 d1 5.20 5.37 5.55 e 6.50 6.60 6.70 e1 4.60 4.78 4.95 e 2.20 2.25 2.30 e1 4.40 4.50 4.60 h 16.18 16.48 16.78 l 9.00 9.30 9.60 l1 0.80 1.00 1.20 l2 0.90 1.08 1.25 1357 2135
docid026788 rev 2 17/18 STP7N65M2, stu7n65m2 revision history 18 5 revision history table 12. document revision history date revision changes 07-aug-2014 1 first release. 09-oct-2014 2 added figure 4: safe operating area for ipak and figure 5: thermal impedance for ipak . updated section 4: package mechanical data . minor text changes.
STP7N65M2, stu7n65m2 18/18 docid026788 rev 2 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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